Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-09
2007-01-09
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000, C438S275000, C257S369000, C257SE21409, C257SE29255
Reexamination Certificate
active
10969108
ABSTRACT:
P channel transistors are formed in a semiconductor layer that has a (110) surface orientation for enhancing P channel transistor performance, and the N channel transistors are formed in a semiconductor layer that has a (100) surface orientation. To further provide P channel transistor performance enhancement, the direction of their channel lengths is selected based on their channel direction. The narrow width P channel transistors are preferably oriented in the <100> direction. The wide channel width P channel transistors are preferably oriented in the <110> direction.
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Barr Alexander L.
Jovanovic Dejan
Nguyen Bich-Yen
Sadaka Mariam G.
Thean Voon-Yew
Balconi-Lamica Michael
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Fulk Steven J.
Smith Bradley K.
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