Chamber recovery after opening barrier over copper

Details Chamber recovery after opening barrier over copper Chamber recovery after opening barrier over copper

2006-08-23

2009-08-18

Deo, Duy-Vu N (Department: 1792)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S001200, C134S001300

Reexamination Certificate

active

07575007

ABSTRACT:
A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.

REFERENCES:
patent: 5356478 (1994-10-01), Chen et al.
patent: 6258728 (2001-07-01), Donohoe et al.
patent: 6277759 (2001-08-01), Blalock et al.
patent: 6569257 (2003-05-01), Nguyen et al.
patent: 7097716 (2006-08-01), Barnes et al.
patent: 2004/0074869 (2004-04-01), Wang et al.
patent: 2007/0107749 (2007-05-01), Sin

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