Cell capacitors, memory cells, memory arrays, and method of fabr

Details Cell capacitors, memory cells, memory arrays, and method of fabr Cell capacitors, memory cells, memory arrays, and method of fabr

1997-04-18

2000-05-16

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438197, 438253, 438255, 438694, 438700, 438734, 438396, 438398, 257306, H01L 2100

Patent

active

060636564

ABSTRACT:
A masking and etching technique during the formation of a memory cell capacitor which utilizes an etching technique to utilize a maximum surface area over the memory cell and to form thin spacers to pattern separation walls between capacitors. This technique results in efficient space utilization which, in turn, results in an increase in the surface area of the capacitor for an increased memory cell capacitance.

REFERENCES:
patent: 5013680 (1991-05-01), Lowrey et al.
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5270241 (1993-12-01), Dennison et al.
patent: 5292677 (1994-03-01), Dennison
patent: 5338700 (1994-08-01), Dennison et al.
patent: 5340763 (1994-08-01), Dennison
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5362666 (1994-11-01), Dennison
patent: 5457063 (1995-10-01), Park
patent: 5459094 (1995-10-01), Jun
patent: 5478772 (1995-12-01), Fazan
patent: 5491356 (1996-02-01), Dennison et al.
patent: 5494841 (1996-02-01), Dennison et al.
patent: 5508223 (1996-04-01), Tseng
patent: 5652165 (1997-07-01), Lu et al.
patent: 5654238 (1997-08-01), Cronin et al.
patent: 5702968 (1997-12-01), Chen
patent: 5874756 (1999-02-01), Ema et al.
patent: 5926709 (1999-07-01), Aisou et al.
patent: 5932491 (1999-08-01), Wald et al.
patent: 5946566 (1999-08-01), Choi
patent: 5946571 (1999-08-01), Hsue et al.

Affiliated with

Also associated with

Rating

Cell capacitors, memory cells, memory arrays, and method of fabr does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Cell capacitors, memory cells, memory arrays, and method of fabr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cell capacitors, memory cells, memory arrays, and method of fabr will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-258293