Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-01
2008-01-01
Thai, Luan (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S106000, C438S123000, C257S784000, C257S787000, C257SE23031, C257SE23061, C257S676000
Reexamination Certificate
active
11042939
ABSTRACT:
A carrier-free semiconductor package and a fabrication method thereof are provided. The fabrication method includes the steps of: providing a carrier having a plurality of electrical contacts formed thereon; mounting at least one chip on the carrier; electrically connecting the chip to the electrical contacts via a plurality of bonding wires; forming a coating layer on each of the electrical contacts to encapsulate a bonded end of each of the bonding wires on the electrical contacts; performing a molding process to form an encapsulant for encapsulating the chip, the bonding wires and the electrical contacts; and removing the carrier, such that bottom surfaces of the electrical contacts are exposed from the encapsulant. This obtains a semiconductor package not having a carrier, and the coating layers can enhance adhesion between the electrical contacts and the encapsulant.
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Ho Yu-Ting
Li Chun-Yuan
Lin Yu-Wei
Tang Fu-Di
Tsai Terry
Corless Peter F.
Edwards Angell Palmer & & Dodge LLP
Jensen Steven M.
Siliconware Precision Industries Co. Ltd.
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