Capacitors including a cavity containing a buried layer

Details Capacitors including a cavity containing a buried layer Capacitors including a cavity containing a buried layer

2006-04-25

2006-04-25

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S239000, C438S240000, C438S241000, C438S250000, C438S253000, C438S396000

Reexamination Certificate

active

07034350

ABSTRACT:
Capacitors include an integrated circuit (semiconductor) substrate and an interlayer dielectric disposed on the integrated circuit substrate and including a metal plug therein. A lower electrode is disposed on the interlayer dielectric and contacting the metal plug. The lower electrode includes a cavity therein and a buried layer in the cavity. The buried layer is an oxygen absorbing material. A dielectric layer disposed on the lower electrode and an upper electrode is disposed on the dielectric layer. The lower electrode may be a noble metal layer. The buried layer may fill in the cavity and may not contain oxygen (O2) when initially formed.

REFERENCES:
patent: 6559025 (2003-05-01), Kim
patent: 2001/0044179 (2001-11-01), Kim

Affiliated with

Also associated with

Rating

Capacitors including a cavity containing a buried layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitors including a cavity containing a buried layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitors including a cavity containing a buried layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3579069