Capacitors in integrated circuits

Details Capacitors in integrated circuits Capacitors in integrated circuits

1998-10-19

2000-08-08

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438240, 438393, H01L 218242

Patent

active

061001333

ABSTRACT:
The present invention relates to a method for, in the manufacturing of an integrated circuit, producing a capacitor with metallic conducting electrodes and to the capacitor itself and to the integrated circuit, which preferably are intended for high-frequency applications. According to the invention, a lower electrode (17,63,67) is produced through depositing a first metal layer (15) onto a layer structure (11) comprising lowermost a substrate and uppermost an insulating layer (13). An insulating layer (19) is deposited over the first metal layer (15), whereafter an electrical connection (25) to the lower electrode (17,63,67) is produced by etching a via hole (21) through the insulating layer (19), which via hole (21) is plugged. Thereafter the first metal layer (15) is uncovered within a predetermined area (33), whereafter a dielectric layer (35) is deposited, patterned and etched in such a way that it overlaps (39) a portion of the second insulating layer (19). Finally, an upper electrode (47,63,67) and a connecting layer (43) are produced through a second metal layer (41) being deposited on the structure (40) achieved thereby, which second metal layer (41) is patterned and etched in such a way that the upper electrode (47,63,67) overlaps (49) the second insulating layer (19) and the connecting layer (43) overlaps the plugged via hole (21).

REFERENCES:
patent: 4481283 (1984-11-01), Kerr et al.
patent: 4997794 (1991-03-01), Josquin et al.
patent: 5406447 (1995-04-01), Miyazaki
patent: 5554565 (1996-09-01), Liaw et al.
patent: 5563762 (1996-10-01), Leung et al.
patent: 5627391 (1997-05-01), Shimada
patent: 5851870 (1998-12-01), Alugbin et al.

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