Capacitorless 1-transistor DRAM cell and fabrication method

Details Capacitorless 1-transistor DRAM cell and fabrication method Capacitorless 1-transistor DRAM cell and fabrication method

2008-03-11

2008-03-11

Pham, Thanh Van (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S218000, C438S508000, C257SE21632, C257SE21646

Reexamination Certificate

active

11367731

ABSTRACT:
A semiconductor device is fabricated by forming a trench in a semiconductor body. A region of dielectric material is formed within at least a lower portion of the trench. An upper portion of the semiconductor body is doped. A cutout is formed in the semiconductor material such that a vertical strip of semiconductor material remains along a sidewall of the dielectric material. A lower portion of the semiconductor body adjacent the sidewall of the dielectric material is doped. A gate dielectric layer is formed over the vertical strip of semiconductor material and a gate electrode is arranged in the cutout.

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