Capacitor with stoichiometrically adjusted dielectric and...

Details Capacitor with stoichiometrically adjusted dielectric and... Capacitor with stoichiometrically adjusted dielectric and...

2005-10-04

2005-10-04

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S381000, C438S786000, C438S788000, C438S792000

Reexamination Certificate

active

06951787

ABSTRACT:
A capacitor and a capacitor dielectric material are fabricated by adjusting the amount of an ionic conductive species, such as hydrogen, contained in the capacitor dielectric material to obtain predetermined electrical or functional characteristics. Forming the capacitor dielectric material from silicon, nitrogen and hydrogen allows a stoichiometric ratio control of silicon to nitrogen to limit the amount of hydrogen. Forming the capacitor by dielectric material plasma enhanced chemical vapor deposition (PECVD) allows hydrogen bonds to be broken by ionic bombardment, so that stoichiometric control is achieved by controlling the power of the PECVD. Applying a predetermined number of thermal cycles of temperature elevation and temperature reduction also breaks the hydrogen bonds to control the amount of the hydrogen in the formed capacitor dielectric material.

REFERENCES:
patent: 4907064 (1990-03-01), Yamazaki et al.
patent: 5652172 (1997-07-01), Yung-Sung et al.

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