Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-03-20
2007-03-20
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S770000, C257SE21010
Reexamination Certificate
active
10819420
ABSTRACT:
A stabilized capacitor using non-oxide electrodes and high dielectric constant oxide dielectric materials and methods of making such capacitors and their incorporation into DRAM cells is provided. A preferred method includes providing a non-oxide electrode, oxidizing an upper surface of the non-oxide electrode, depositing a high dielectric constant oxide dielectric material on the oxidized surface of the non-oxide electrode, and depositing an upper layer electrode on the high dielectric constant oxide dielectric material.
REFERENCES:
patent: 4984038 (1991-01-01), Sunami
patent: 5272417 (1993-12-01), Ohmi
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 5714402 (1998-02-01), Choi
patent: 5786248 (1998-07-01), Schuegraf
patent: 5814852 (1998-09-01), Sandhu et al.
patent: 5837593 (1998-11-01), Park et al.
patent: 5859760 (1999-01-01), Park et al.
patent: 5918118 (1999-06-01), Kim et al.
patent: 5935650 (1999-08-01), Lerch et al.
patent: 5985730 (1999-11-01), Lim
patent: 5994153 (1999-11-01), Nagel et al.
patent: 5994183 (1999-11-01), Huang et al.
patent: 6017789 (2000-01-01), Sandhu et al.
patent: 6030847 (2000-02-01), Fazan et al.
patent: 6133159 (2000-10-01), Vaartstra et al.
patent: 6140229 (2000-10-01), Sumi
patent: 6143598 (2000-11-01), Martin et al.
patent: 6162744 (2000-12-01), Al-Shareef et al.
patent: 6165834 (2000-12-01), Agarwal et al.
patent: 6239461 (2001-05-01), Lee
patent: 6281142 (2001-08-01), Basceri et al.
patent: 6319542 (2001-11-01), Sumerfelt et al.
patent: 6344662 (2002-02-01), Dimitrakopoulos et al.
patent: 6362501 (2002-03-01), Kim
patent: 6372097 (2002-04-01), Chen
patent: 6486020 (2002-11-01), Thakur et al.
patent: 6498094 (2002-12-01), Nakao et al.
patent: 6630702 (2003-10-01), Zhang et al.
patent: 6727140 (2004-04-01), Basceri et al.
patent: 6902939 (2005-06-01), Moise et al.
patent: 2002/0047148 (2002-04-01), Won et al.
patent: 2004/0183142 (2004-09-01), Matsuo et al.
patent: 03257857 (1991-11-01), None
patent: 11-121711 (1999-04-01), None
patent: 11121711 (1999-04-01), None
S. Wolf, Silicon Processing for the VLSI Era, vol. 2, Lattice Press (1990) pp. 587-597.
John R. Hollahan and Alexis T. Bell, Techniques and Applications of Plasma Chemistry, John Wiley & Sons (1974) pp. 26-28 and 47-48.
Tsunemine et al., “A manufacturable integration technology of sputter-BST capacitor with a newly proposed thick Pt electrode”, IEEE, 1998, pp. 30.3.1-30.3.4.
Basceri Cem
Sandhu Gurtej S.
Yang Sam
Dinsmore & Shohl LLP
Everhart Caridad
Micro)n Technology, Inc.
LandOfFree
Capacitor with high dielectric constant materials and method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor with high dielectric constant materials and method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor with high dielectric constant materials and method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3763708