Capacitor that includes high permittivity capacitor dielectric

Details Capacitor that includes high permittivity capacitor dielectric Capacitor that includes high permittivity capacitor dielectric

2006-01-13

2010-06-29

Doan, Theresa T (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S238000, C438S240000, C257S516000, C257S532000

Reexamination Certificate

active

07745279

ABSTRACT:
A decoupling capacitor is formed on a semiconductor substrate that includes a silicon surface layer. A substantially flat bottom electrode is formed in a portion of the semiconductor surface layer. A capacitor dielectric overlies the bottom electrode. The capacitor dielectric is formed from a high permittivity dielectric with a relative permittivity, preferably greater than about 5. The capacitor also includes a substantially flat top electrode that overlies the capacitor dielectric. In the preferred application, the top electrode is connected to a first reference voltage line and the bottom electrode is connected to a second reference voltage line.

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