Capacitor structures, DRAM cell structures, and integrated...

Details Capacitor structures, DRAM cell structures, and integrated... Capacitor structures, DRAM cell structures, and integrated...

2001-01-22

2002-12-31

Whitehead, Jr., Carl (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S254000, C438S396000, C438S397000

Reexamination Certificate

active

06500709

ABSTRACT:

TECHNICAL FIELD
This invention pertains to semiconductor capacitor constructions and to methods of forming semiconductor capacitor constructions. The invention is thought to have particular significance in application to methods of forming dynamic random access memory (DRAM) cell structures, and to DRAM cell structures.
BACKGROUND OF THE INVENTION
A commonly used semiconductor memory device is a DRAM cell. A DRAM cell generally consists of a capacitor coupled through a transistor to a bitline. A continuous challenge in the semiconductor industry is to increase DRAM circuit density. Accordingly, there is a continuous effort to decrease the size of memory cell components. A limitation on the minimal size of cell components is impacted by the resolution of a photolithographic etch during a fabrication process. Although this resolution is generally being improved, at any given time there is a minimum photolithographic feature dimension of which a fabrication process is capable. It would be desirable to form DRAM components having at least some portions which comprise a cross-sectional dimension of less than a given minimum capable photolithographic feature dimension.
Another continuous trend in the semiconductor industry is to minimize processing steps. Accordingly, it is desirable to utilize common steps for the formation of separate DRAM components. For instance, it is desirable to utilize common steps for the formation of the DRAM capacitor structures and the DRAM bitline contacts.
A semiconductor wafer fragment
10
is illustrated in
FIG. 1
showing a prior art DRAM array
83
. Wafer fragment
10
comprises a semiconductive material
12
, field oxide regions
14
, and wordlines
24
and
26
. Wordlines
24
and
26
comprise a gate oxide layer
16
, a polysilicon layer
18
, a silicide layer
20
and a silicon oxide layer
22
. Silicide layer
20
comprises a refractory metal silicide, such as tungsten silicide, and polysilicon layer
18
typically comprises polysilicon doped with a conductivity enhancing dopant. Nitride spacers
30
are laterally adjacent wordlines
24
and
26
.
Electrical node locations
25
,
27
and
29
are between wordlines
24
and
26
and are electrically connected by transistor gates comprised by wordlines
24
and
26
. Node locations
25
,
27
and
29
are diffusion regions formed within semiconductive material
12
.
A borophosphosilicate glass (BPSG) layer
34
is over semiconductive material
12
and wordlines
24
and
26
. An oxide layer
32
is provided between BPSG layer
34
and material
12
. Oxide layer
32
inhibits diffusion of phosphorus from BPSG layer
34
into underlying materials.
Conductive pedestals
54
,
55
and
56
extend through BPSG layer
34
to node locations
25
,
27
and
29
, respectively. Capacitor constructions
62
and
64
contact upper surfaces of pedestals
54
and
56
, respectively. Capacitor constructions
62
and
64
comprise a storage node layer
66
, a dielectric layer
68
, and a cell plate layer
70
. Dielectric layer
68
comprises an electrically insulative layer, such as silicon nitride. Cell plate layer
70
comprises conductively doped polysilicon, and may alternatively be referred to as a cell layer
70
. Storage node layer
66
comprises conductively doped hemispherical grain polysilicon.
A conductive bitline plug
75
contacts an upper surface of pedestal
55
. Bitline plug
75
may comprise, for example, tungsten. Together, bitline plug
75
and pedestal
55
comprise a bitline contact
77
.
A bitline
76
extends over capacitors
62
and
64
and in electrical connection with bitline contact
77
. Bitline
76
may comprise, for example, aluminum.
The capacitors
62
and
64
are electrically connected to bitline contact
77
through transistor gates comprised by wordlines
26
. A first DRAM cell
79
comprises capacitor
62
electrically connected to bitline
76
through a wordline
26
and bitline contact
77
. A second DRAM cell
81
comprises capacitor
64
electrically connected to bitline
76
through wordline a
26
and bitline contact
77
. DRAM array
83
comprises first and second DRAM cells
79
and
81
.
SUMMARY OF THE INVENTION
The invention includes a number of methods and structures pertaining to semiconductor circuit technology, including: methods of forming DRAM memory cell constructions; methods of forming capacitor constructions; methods of forming capacitor and bitline constructions; DRAM memory cell constructions; capacitor constructions; capacitor and bitline constructions, and integrated circuitry.
The invention encompasses a method of forming a capacitor wherein a first layer is formed over a node location and a semiconductive material masking layer is formed over the first layer, wherein an opening is etched through the semiconductive material masking layer and first layer to the node location using the semiconductive material masking layer as an etch mask, wherein a storage node layer is formed within the opening and in electrical connection with the masking layer, and wherein at least the masking layer is patterned to form a capacitor storage node comprising the masking layer and the storage node layer.
The invention also encompasses a method of forming a capacitor wherein a first layer is formed over a node location, wherein a semiconductive material masking layer is formed over the first layer, wherein an opening is etched through the semiconductive material masking layer and first layer to the node location using the semiconductive material masking layer as an etch mask, wherein a storage node layer is formed to substantially fill the opening and in electrical connection with the masking layer, and wherein the masking layer and the storage node layer are patterned to form a capacitor storage node.
The invention also encompasses a DRAM cell comprising a capacitor electrically connected to a bitline through a transistor gate, wherein the capacitor comprises a storage node which, in lateral cross-section, has an outer surface extending over its top, along a pair of its opposing lateral surfaces, and within laterally opposing cavities beneath it. The capacitor further comprises a dielectric layer against the storage node outer surface and extending along the lateral opposing surfaces of the storage node and within the opposing cavities beneath the storage node. Additionally, the capacitor comprises a cell plate layer against the dielectric layer and extending along the lateral opposing surfaces of the storage node and within the opposing cavities beneath the storage node.


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