Capacitor over bit line structure using a straight bit line shap

Details Capacitor over bit line structure using a straight bit line shap Capacitor over bit line structure using a straight bit line shap

1997-11-03

2000-02-15

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, 257306, H01L 218242

Patent

active

060252278

ABSTRACT:
A method of creating a capacitor over bit line structure, used for high density, DRAM designs, has been developed. The process consists of creating a straight bit line shape, connected to an underlying polysilicon contact plug structure, which in turn contacts an underlying source and drain region. A storage node contact hole is opened through insulator layers and through the straight bit line shape. After passivation of the storage node contact hole with silicon nitride spacers, a storage node structure is formed on an overlying insulator layer, as well as in the storage node contact hole, overlying and contacting another polysilicon contact plug.

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patent: 5776815 (1998-07-01), Pan et al.
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