Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-11
2006-07-11
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S244000, C438S253000, C438S387000, C438S702000, C438S703000, C438S723000
Reexamination Certificate
active
07074668
ABSTRACT:
In a method for forming a capacitor for use in a semiconductor device, a nitride film for stopping etching, a first mold oxide film, an insulating film, deposited on a substrate are etched to expose the respective storage node contacts and thereby to form a plurality of contact holes arrayed in a zigzag pattern for storage electrodes. A sacrificial oxide film is deposited by burying the contact holes for storage electrodes in a thickness such that an outer portion of the storage electrodes having a relatively short interval is completely buried while an outer portion the storage electrodes having a relatively long interval is not completely buried. The sacrificial oxide film and the insulation film are etched back to form a support network enclosing the respective storage electrodes and interconnected to each other.
REFERENCES:
patent: 5770098 (1998-06-01), Araki et al.
patent: 6929999 (2005-08-01), Park et al.
patent: 2001/0006834 (2001-07-01), Hirota et al.
patent: 2003/0235946 (2003-12-01), Lee et al.
patent: 2004/0217407 (2004-11-01), Cho et al.
Park Ki Seon
Roh Jae Sung
Fourson George
Garcia Joannie Adelle
Hynix / Semiconductor Inc.
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