Methods of etching a contact opening over a node location on...

Details Methods of etching a contact opening over a node location on... Methods of etching a contact opening over a node location on...

2006-01-03

2006-01-03

Elms, Richard (Department: 2824)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S737000, C438S735000, C438S706000

Reexamination Certificate

active

06982228

ABSTRACT:
A chemical vapor deposition method includes providing a semiconductor substrate within a chemical vapor deposition chamber. At least one liquid deposition precursor is vaporized with a vaporizer to form a flowing vaporized precursor stream. The flowing vaporized precursor stream is initially bypassed from entering the chamber for a first period of time while the substrate is in the deposition chamber. After the first period of time, the flowing vaporized precursor stream is directed to flow into the chamber with the substrate therein under conditions effective to chemical vapor deposit a layer over the substrate. A method of etching a contact opening over a node location on a semiconductor substrate is disclosed.

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