Capacitor including a dielectric layer having an...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Reexamination Certificate

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C438S393000, C438S244000, C438S396000

Reexamination Certificate

active

07125767

ABSTRACT:
In a capacitor, and a method of fabricating the same, the capacitor includes a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer, wherein the dielectric layer includes a lower dielectric region contacting the lower electrode, an upper dielectric region contacting the upper electrode, and at least one middle dielectric region between the lower dielectric region and the upper dielectric region, the at least one middle dielectric region having a less crystalline region than both the lower dielectric region and the upper dielectric region.

REFERENCES:
patent: 6436777 (2002-08-01), Ota
patent: 6528328 (2003-03-01), Aggarwal et al.
patent: 7011978 (2006-03-01), Basceri
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2003/0017266 (2003-01-01), Basceri et al.
patent: 2003/0038311 (2003-02-01), Basceri et al.
patent: 2003/0104667 (2003-06-01), Basceri et al.

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