Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-24
2006-10-24
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S393000, C438S244000, C438S396000
Reexamination Certificate
active
07125767
ABSTRACT:
In a capacitor, and a method of fabricating the same, the capacitor includes a lower electrode, a dielectric layer on the lower electrode, and an upper electrode on the dielectric layer, wherein the dielectric layer includes a lower dielectric region contacting the lower electrode, an upper dielectric region contacting the upper electrode, and at least one middle dielectric region between the lower dielectric region and the upper dielectric region, the at least one middle dielectric region having a less crystalline region than both the lower dielectric region and the upper dielectric region.
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patent: 6436777 (2002-08-01), Ota
patent: 6528328 (2003-03-01), Aggarwal et al.
patent: 7011978 (2006-03-01), Basceri
patent: 2002/0153579 (2002-10-01), Yamamoto
patent: 2003/0017266 (2003-01-01), Basceri et al.
patent: 2003/0038311 (2003-02-01), Basceri et al.
patent: 2003/0104667 (2003-06-01), Basceri et al.
Jeong Yong-kuk
Kim Weon-Hong
Kwon Dae-Jin
Lee Jung-Hyoung
Song Min-woo
Lee & Morse P.C.
Luu Chuong Anh
Samsung Electronics Co,. Ltd.
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