Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-11-13
2007-11-13
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000
Reexamination Certificate
active
11519615
ABSTRACT:
A capacitor includes an upper electrode formed by physical vapor deposition and chemical vapor deposition. The upper electrode of the capacitor may include a first upper electrode formed by chemical vapor deposition and a second upper electrode formed by physical vapor deposition. Alternatively, the upper electrode may include a first upper electrode formed by physical vapor deposition and a second upper electrode formed by chemical vapor deposition. The upper electrode of the capacitor is formed through two steps using chemical vapor deposition and physical vapor deposition. Therefore, the upper electrode can be thick and rapidly formed, whereby electrical characteristics of the upper electrode are not deteriorated.
REFERENCES:
patent: 6238964 (2001-05-01), Cho
patent: 6303490 (2001-10-01), Jeng
patent: 2755 (2002-01-01), None
Jeong Yong-Kuk
Kang Ho-Kyu
Kim Hong-Ki
Kim Kyung-Hun
Park Moon-Han
F. Chau & Assoc. LLC
Nguyen Tuan H.
Samsung Electronics Co,. Ltd.
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