Capacitor and method for fabricating the same

Details Capacitor and method for fabricating the same Capacitor and method for fabricating the same

2005-04-29

2008-08-19

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21664

Reexamination Certificate

active

07413949

ABSTRACT:
A capacitor is formed on an interlayer insulating film formed on a semiconductor substrate. The capacitor includes a bottom electrode made of platinum, a capacitor insulating film made of SrTaBiO (SBT) containing an element absorbing hydrogen such as titanium, for example, in grain boundaries, inter-lattice positions or holes, and a top electrode made of platinum.

REFERENCES:
patent: 5973911 (1999-10-01), Nishioka
patent: 6072689 (2000-06-01), Kirlin
patent: 6184927 (2001-02-01), Kang
patent: 6225156 (2001-05-01), Cuchiaro et al.
patent: 6597029 (2003-07-01), Kim et al.
patent: 11-8355 (1999-01-01), None
patent: 2001-267519 (2001-09-01), None

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