Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-02
2005-08-02
Vu, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257S303000
Reexamination Certificate
active
06924193
ABSTRACT:
A method for fabricating a capacitor comprises the steps of: forming a lower electrode of a metal over a substrate; forming a capacitor dielectric film of an oxide dielectric film on the lower electrode; depositing a metal film on the capacitor dielectric film; performing a thermal processing in a hydrogen-content atmosphere after the step of depositing the metal film; and patterning the metal film to form an upper electrode of the metal film after the step of performing the thermal processing. Thus, the adhesion between the upper electrode and the capacitor dielectric film is improved, and capacitor characteristics can be improved.
REFERENCES:
patent: 5864153 (1999-01-01), Nagel et al.
patent: 6078072 (2000-06-01), Okudaira et al.
patent: 6136641 (2000-10-01), Won et al.
patent: 6403414 (2002-06-01), Marsh
Chu Chung-Ming
Hieda Katsuhiko
Lin Jun
Suzuki Toshiya
Fujitsu Limited
Vu David
Westerman Hattori Daniels & Adrian LLP
Winbond Electronics Corp.
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