Buried strap poly etch back (BSPE) process

Details Buried strap poly etch back (BSPE) process Buried strap poly etch back (BSPE) process

1999-07-26

2000-05-23

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438248, 438386, 438391, H01L 218242

Patent

active

060665270

ABSTRACT:
In accordance with the present invention, a method for etching back filler material for a buried strap for deep trench capacitors includes the steps of forming a trench in a substrate, filling the trench with a first filler material, recessing the first filler material to a predetermined depth relative to a dielectric collar formed in the trench, forming a divot by etching back the dielectric collar, depositing a liner over the first filler material and portions of the substrate exposed by the formation of the trench, and depositing a second filler material on the liner. A surface of the second filler material is prepared by etching the surface with a wet etchant to provide a hydrogen terminated silicon surface. Wet etching the second filler material is performed to etch back the second filler material selective to the liner and the substrate. The second filler material is etched to form a buried strap.

REFERENCES:
patent: 5225697 (1993-07-01), Malhi et al.
patent: 5770484 (1998-06-01), Kleinhenz
patent: 5981332 (1999-11-01), Mandelman et al.
patent: 6008104 (1999-12-01), Schrems

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