Buried plate type DRAM

Details Buried plate type DRAM Buried plate type DRAM

1993-07-13

1994-08-09

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257301, 257305, 257311, H01L 2968, H01L 2978, H01L 2992

Patent

active

053369122

ABSTRACT:
A trench of a buried plate type DRAM has a bottom portion wider than an opening portion. A silicon oxide film is formed on an upper portion of the side wall of the trench. An N-type impurity diffusion region is formed around the bottom portion of the trench. Impurity diffusion regions of adjacent trenches are integrally connected with each other as one portion. A first polycrystalline silicon layer is formed on the impurity diffusion region in the trench and the silicon oxide film. The polycrystalline silicon layer is coated with a laminated film consisting of a silicon nitride film and a silicon oxide film. The trench is filled with a second polycrystalline silicon layer covering the laminated film. The impurity diffusion region serves as a plate diffusion region of a capacitor, the first polycrystalline silicon layer serves as a plate electrode, the laminated film serves as a capacitor insulating film, and the second polycrystalline silicon layer serves as a storage node electrode. The capacitor is formed in the trench.

REFERENCES:
patent: 4763179 (1988-08-01), Tsubouchi
patent: 5079615 (1992-01-01), Yamazaki et al.

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