Method of manufacturing a semiconductor device having a capacito

Details Method of manufacturing a semiconductor device having a capacito Method of manufacturing a semiconductor device having a capacito

1996-04-15

1997-09-16

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438396, H01L 2170, H01L 2700

Patent

active

056680414

ABSTRACT:
According to a semiconductor device and a method of manufacturing thereof, a sidewall spacer is formed at a sidewall of a contact hole, in a recess portion defined by the sidewall of the contact hole and a buried conductive layer, having a film thickness gradually increasing from a top face corner of an interlayer insulation film to the surface of the buried conductive layer. Therefore, a semiconductor device that can achieve favorable breakdown voltage and anti-leak characteristics between a lower electrode layer and an upper electrode layer forming a capacitor of a DRAM.

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