Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1992-11-12
1994-08-09
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257274, 257346, 257552, 257754, H01L 2702
Patent
active
053369114
ABSTRACT:
A Bi-MOS semiconductor device of the type having a bipolar device and a plurality of MOS devices formed on a principal surface of a semiconductor aubstrate and a method of producing the same. The device includes a plurality of element isolation regions each thereof being composed of a first semiconductor region formed in the semiconductor substrate and having the same type of conductivity as the semiconductor substrate, and a thick insulation layer formed on the first semiconductor region, and at least one of an emitter electrode and a collector electrode formed in the bipolar device, gate electrodes formed in the MBS devices, a low-resistivity polycrystalline layer formed by a buried contact from one of the MOS devices and a high-resistivity portion formed by a high resistivity polycrystalline silicon layer connected to the low-resistivty polycrystalline silicon layer are formed from a polycrystalline silicon layer formed by the same layer formation.
REFERENCES:
patent: 4451328 (1984-05-01), Dubois
patent: 4901134 (1990-02-01), Misawa et al.
IEEE Journal of Solid State Circuit, vol. SC-21, No. 5, pp. 681-684 1986; "13-ns, 500 mW, 64-Kbit ECL RAM Using Hi-BICMOS Technology".
Extended Abstracts of 18th Conference on Solid State Devices and Materials, Tokyo, 1986 pp. 329-322, "A 7ns/350mW 16Kb HI-BICMOS RAM".
Hille Rolf
Potter Roy
Seiko Epson Corporation
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