Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-07-21
2000-01-25
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
228 8, 228 25, 438 15, 438 14, 438800, H01L 2144
Patent
active
060178124
ABSTRACT:
The present invention provides a bump bonding method that can prevent bumps from being inappropriately shaped. The bump bonding method comprises forming a gold ball (16) at the tip of a gold wire (1) that is inserted through a capillary (3), lowering the capillary (3) while using a displacement detection sensor to detect the vertical displacement of the capillary (3), detecting the position of that portion of an IC (11) in which an electrode is formed, based on the displacement of the capillary (3) detected by the displacement detection sensor when the gold ball (16) abuts the IC (11), pressing he gold ball (16) against the electrode forming portion to form a bump pedestal (17), elevating the capillary (3) a specified amount while moving it in the horizontal direction a specified amount, setting the height S of a position at which the capillary (3) is stopped based on the height H1 of the bump pedestal (17) detected by the displacement detection sensor, again lowering the capillary (3) down to the stop position height S to join the gold wire (1) to the bump pedestal (17), and then lifting the gold wire (1) to break the joint between the bump pedestal (17) and the gold wire (1).
REFERENCES:
patent: 5060843 (1991-10-01), Yasuzato et al.
patent: 5294038 (1994-03-01), Nakano
patent: 5686353 (1997-11-01), Yagi et al.
Imanishi Makoto
Kanayama Shinji
Nakao Osamu
Yamamoto Akihiro
Yonezawa Takahiro
Bowers Charles
Matsushita Electric - Industrial Co., Ltd.
Thompson Craig
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