Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-03-08
2005-03-08
Wilson, Allan R. (Department: 2815)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000, C438S617000
Reexamination Certificate
active
06864168
ABSTRACT:
A bump structure on a contact pad and a fabricating process thereof. The bump comprises an under-ball-metallurgy layer, a bonding mass and a welding lump. The under-ball-metallurgy layer is formed over the contact pad and the bonding mass is formed over the under-ball-metallurgy layer by conducting a pressure bonding process. The bonding mass having a thickness between 4 to 10 μm is made from a material such as copper. The welding lump is formed over the bonding mass such that a sidewall of the bonding mass is also enclosed.
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patent: 6049130 (2000-04-01), Hosomi et al.
patent: 6586322 (2003-07-01), Chiu et al.
patent: 6593220 (2003-07-01), Yu et al.
Chang Chih-Huang
Chen William Tze-You
Cheng Po-Jen
Huang Wen-Pin
Lee Chun-Chi
Advanced Semiconductor Engineering Inc.
Jiang Chyun IP Office
Wilson Allan R.
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