Buffer layer for selective SiGe growth for uniform nucleation

Details Buffer layer for selective SiGe growth for uniform nucleation Buffer layer for selective SiGe growth for uniform nucleation

2007-12-18

2007-12-18

Luu, Chuong A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S767000, C438S507000

Reexamination Certificate

active

10943048

ABSTRACT:
Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are disclosed.

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Burgharz, J. N. et al., “Selective Epitaxial Base with Si/Ge Bandgap for Double-Poly Self-Aligned Bipolar Transistors,” IBM Technical Disclosure Bulletin, vol. 34, No. 8, Jan. 1992, pp. 86-88.

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