Bottom-gate SONOS-type cell having a silicide gate

Details Bottom-gate SONOS-type cell having a silicide gate Bottom-gate SONOS-type cell having a silicide gate

2007-12-04

2007-12-04

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S954000, C257SE21179

Reexamination Certificate

active

11077901

ABSTRACT:
A bottom-gate thin film transistor having a silicide gate is described. This transistor is advantageously formed as SONOS-type nonvolatile memory cell, and methods are described to efficiently and robustly form a monolithic three dimensional memory array of such cells. The fabrication methods described avoid photolithography over topography and difficult stack etches of prior art monolithic three dimensional memory arrays of charge storage devices. The use of a silicide gate rather than a polysilicon gate allows increased capacitance across the gate oxide.

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patent: 2004/0002186 (2004-01-01), Vyvoda et al.
patent: 2004/0124466 (2004-07-01), Walker et al.

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