Bonding pad in semiconductor device

Details Bonding pad in semiconductor device Bonding pad in semiconductor device

1996-07-12

1998-09-08

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Configuration or pattern of bonds

257784, 257781, H01L 2329, H01L 2331, H01L 2702

Patent

active

058048839

ABSTRACT:
A bonding pad in a semiconductor device having at least one slit is provided. In the semiconductor device including a passivation layer covering the bonding pad and metal wiring, at least one slit is formed on the bonding pad for electrically connecting the metal wiring to external leads of the semiconductor device. The slit formed in the bonding pad may be filled with a molding compound to buffer the stresses caused by a wire-bonding process. Hence, stress-induced corrosion may be reduced and PCT reliability may be enhanced.

REFERENCES:
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patent: 4654692 (1987-03-01), Sakurai et al.
patent: 5288539 (1994-02-01), Araki
patent: 5289036 (1994-02-01), Nishimoto
patent: 5291060 (1994-03-01), Shimizu et al.
patent: 5329162 (1994-07-01), Nadaoka
patent: 5444186 (1995-08-01), Eguchi
patent: 5550402 (1996-08-01), Nicklaus
John H. Lau, "Thermal Stress And Strain In Microelectronics Packaging", Van Nostrand Reinhold, 1993, pp. 430-434.

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