Bonding method for through-silicon-via based 3D wafer stacking

Details Bonding method for through-silicon-via based 3D wafer stacking Bonding method for through-silicon-via based 3D wafer stacking

2008-06-02

2011-10-04

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S624000, C438S667000, C438S668000

Reexamination Certificate

active

08030208

ABSTRACT:
There is described a bonding method for through-silicon-via bonding of a wafer stack in which the wafers are formed with through-silicon-vias and lateral microchannels that are filled with solder. To fill the vias and channels the wafer stack is placed in a soldering chamber and molten solder is drawn through the vias and channels by vacuum. The wafers are held together by layers of adhesive during the assembly of the wafer stack. Means are provided for local reheating of the solder after it has cooled to soften the solder to enable it to be removed from the soldering chamber.

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PCT/CN2008/071203; filed Jun. 5, 2008; Search Report mailed Nov. 27, 2008; 5 pp.
PCT/CN2008/071203; filed Jun. 5, 2008; Written Opinion mailed Nov. 27, 2008; 7 pp.

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