Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2005-01-18
2005-01-18
Pham, Hoai (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S738000, C257S779000
Reexamination Certificate
active
06844626
ABSTRACT:
A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subsequent wire bonding processes or flip-chip packaging processes.
REFERENCES:
patent: 6187680 (2001-02-01), Costrini et al.
patent: 6709965 (2004-03-01), Chen et al.
Wolf, Stanley, et al., “Silicon Processing for the VLSI Era, vol. 1: Process Technology,” 2ndEdition, 2000, pp. 841-854, Lattice Press, Sunset Beach, CA.
Cao Min
Chang Tzong-Sheng
Lai Chia-Hung
Lee Yu-Hua
Lin Jiunn-Jyi
Pham Hoai
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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