Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-03-21
2006-03-21
Pham, Hoai (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S613000
Reexamination Certificate
active
07015129
ABSTRACT:
A novel method of forming a bond pad of a semiconductor device and a novel bond pad structure. Two passivation layers are used to form bond pads of a semiconductor device. A portion of the second passivation layer resides between adjacent bond pads, preventing shorting of the bond pads during subsequent wire bonding processes or flip-chip packaging processes.
REFERENCES:
patent: 6187680 (2001-02-01), Costrini et al.
patent: 6709965 (2004-03-01), Chen et al.
Wolf, S., et al., “Silicon Processing for the VLSI, vol. 1, Process Technology,” 2nd Edition (2000) pp. 851-854, Lattice Press, Sunset Beach, CA.
Cao Min
Chang Tzong-Sheng
Lai Chia-Hung
Lee Yu-Hua
Lin Jiunn-Jyi
Pham Hoai
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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