Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-12
2008-10-07
Elms, Richard T. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S383000
Reexamination Certificate
active
07432560
ABSTRACT:
A metal oxide semiconductor field effect transistor (MOSFET) includes a body pattern of a first conductivity type disposed on an insulating layer. A gate electrode is disposed on the body pattern. A drain region of a second conductivity type is disposed on the insulating layer and having a sidewall in contact with a first sidewall of the body pattern. An impurity-doped region of the first conductivity type is disposed on the insulating layer and having a sidewall in contact with a second sidewall of the body pattern. The MOSFET further includes a source region of the second conductivity type disposed on the impurity-doped region and having a sidewall in contact with the second sidewall of the body pattern, and a contact plug extending through the source region to contact the impurity-doped region.
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Quirk, Michael, and Serda, Julian; Semiconductor Manufacturing Technology; 2001 New Jersey, Prentice-Hall Inc., p. 505.
Cho Won-Seok
Jeong Jae-Hun
Jung Soon-Moon
Lim Hoon
Bernstein Allison P
Elms Richard T.
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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