Body-tied-to-source MOSFETs with asymmetrical source and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S383000

Reexamination Certificate

active

07432560

ABSTRACT:
A metal oxide semiconductor field effect transistor (MOSFET) includes a body pattern of a first conductivity type disposed on an insulating layer. A gate electrode is disposed on the body pattern. A drain region of a second conductivity type is disposed on the insulating layer and having a sidewall in contact with a first sidewall of the body pattern. An impurity-doped region of the first conductivity type is disposed on the insulating layer and having a sidewall in contact with a second sidewall of the body pattern. The MOSFET further includes a source region of the second conductivity type disposed on the impurity-doped region and having a sidewall in contact with the second sidewall of the body pattern, and a contact plug extending through the source region to contact the impurity-doped region.

REFERENCES:
patent: 5869874 (1999-02-01), Manning
patent: 5929490 (1999-07-01), Onishi
patent: 5937299 (1999-08-01), Michael et al.
patent: 5965917 (1999-10-01), Maszara et al.
patent: 6344675 (2002-02-01), Imai
patent: 6525378 (2003-02-01), Riccobene
patent: 6914303 (2005-07-01), Doris et al.
patent: 05-075119 (1993-03-01), None
patent: 10-294465 (1998-11-01), None
patent: 2001-0107571 (2001-07-01), None
Quirk, Michael, and Serda, Julian; Semiconductor Manufacturing Technology; 2001 New Jersey, Prentice-Hall Inc., p. 505.

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