Method for manufacturing silicon single crystal, and silicon...

Details Method for manufacturing silicon single crystal, and silicon... Method for manufacturing silicon single crystal, and silicon...

2006-03-31

2008-10-14

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S020000

Reexamination Certificate

active

07435294

ABSTRACT:
A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing substance to an atmosphere gas within a growing apparatus, and doping nitrogen and/or carbon in the crystal. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily sliced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

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