Body contact structures and methods of manufacturing the same

Details Body contact structures and methods of manufacturing the same Body contact structures and methods of manufacturing the same

2010-05-18

2011-11-08

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

08053325

ABSTRACT:
A body contact structure which reduce parasitic capacitance and improves body resistance of a device and methods of manufacture. The method includes forming a gate insulator material and gate electrode material on a substrate. The method further includes patterning the gate insulator material and the gate electrode material to form a gate structure having a shape with a first portion isolated from a second portion. The method further includes forming source and drain regions on sides of the first portion and a body contact at a side and under an area of the second portion, and forming an interlevel dielectric within a space that isolates the first portion from the second portion of the gate structure, and over the gate structure, source and drain regions and the body contact.

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