Bit line sensing circuit of a semiconductor memory device

Details Bit line sensing circuit of a semiconductor memory device Bit line sensing circuit of a semiconductor memory device

1995-12-20

1997-07-08

Dinh, Son T.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365149, 36518911, 365207, G11C 700

Patent

active

056468997

ABSTRACT:
A bit line sensing circuit of a semiconductor memory device is disclosed which includes a pull-up control signal generator that enables the peak current to be small by supplying to the P sense amplifier a pull-up voltage of the low level in an initial sensing process. When the peak current is stabilized, the pull-up control signal generator then reduces the time required for raising the pull-up voltage by very quickly raising the voltage of the pull-up control signal. This results in the advantages that the peak current can be greatly reduced without slowing sensing speed, and voltage noise caused from peak currents can be eliminated.

REFERENCES:
patent: 4951256 (1990-08-01), Tobita
patent: 5148399 (1992-09-01), Cho et al.
patent: 5189639 (1993-02-01), Miyatake
patent: 5412605 (1995-05-01), Ooishi

Affiliated with

Also associated with

Rating

Bit line sensing circuit of a semiconductor memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Bit line sensing circuit of a semiconductor memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bit line sensing circuit of a semiconductor memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2412700