Bit line sensing circuit and method of a semiconductor memory de

Static information storage and retrieval – Read/write circuit – Flip-flop used for sensing

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365174, 365207, 365208, 327 51, 327 57, G11C 700

Patent

active

056383339

ABSTRACT:
A bit line sensing circuit of a semiconductor memory device having NMOS and PMOS sense amps connected to a bit line includes a variable delay path for variably controlling an interval of the operating time between the NMOS and PMOS sense amps in response to a power voltage sensing signal generated by sensing a power voltage level.

REFERENCES:
patent: 5130580 (1992-07-01), Min
patent: 5140199 (1992-08-01), Seo
patent: 5315550 (1994-05-01), Tobita
patent: 5319253 (1994-06-01), You
patent: 5412605 (1995-05-01), Ooishi

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