Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2006-08-04
2008-12-16
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S205000, C365S203000
Reexamination Certificate
active
07466616
ABSTRACT:
A bit line sense amplifier and method thereof are provided. The example bit line sense amplifier may include a sense amplifying circuit coupled between a first bit line and a second bit line. The sense amplifying circuit may be configured to amplify a voltage difference between the first bit line and the second bit line. The example bit line sense amplifier may further include a power supply voltage providing circuit configured to provide a first power supply voltage and a second power supply voltage to the sense amplifying circuit in response to first and second bit line sensing control signals. The bit line sense amplifier may further include a bit line voltage compensation circuit configured to prevent a voltage-reduction at the first bit line and the second bit line for a delay period, the delay period including at least a period of time after a pre-charging of the first and second bit lines, in response to one or more of the first and second bit line sensing control signals.
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patent: 2008/0031054 (2008-02-01), Lehmann et al.
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Korean Office Action issued Jun. 28, 2006 for Korean Patent Application No. 10-2005-0071655.
Byun Sang-Man
Kang Sang-Seok
Lim Jong-Hyoung
Harness Dickey & Pierce
Nguyen Tuan T.
Samsung Electronics Co,. Ltd.
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