Static information storage and retrieval – Read/write circuit – Precharge
Patent
1998-06-10
1999-11-30
Dinh, Son T.
Static information storage and retrieval
Read/write circuit
Precharge
365149, 36518911, G11C 700
Patent
active
059954310
ABSTRACT:
A circuit is designed with a memory array (102) having a plurality of memory cells arranged in rows and columns (204, 206, 210, 212). The memory array has a plurality of bit line pairs (202, 208, 282, 284) with each bit line pair connected to a respective column of memory cells and a bit line reference terminal (254). A control circuit (700) produces a control signal, the control signal having a first voltage for a first time, a second voltage for a second time and a third voltage for a third time. A precharge circuit (350, 352) connects at least one bit line pair to the bit line reference terminal, responsive to the first voltage for the first time and the second voltage for the second time. The precharge circuit disconnects the at least one bit line pair from the bit line reference terminal, responsive to the third voltage for the third time.
REFERENCES:
patent: 5612912 (1997-03-01), Gillingham
patent: 5666318 (1997-09-01), Takai
patent: 5710738 (1998-01-01), Tai
patent: 5761123 (1998-06-01), Kim et al.
Inui Takashi
Matsumoto Masahide
Okuzawa Kiyotaka
Dinh Son T.
Donaldson Richard L.
Holland Robby T.
Rountree Robert N.
Texas Instruments Incorporated
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