Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-07
2007-08-07
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S360000
Reexamination Certificate
active
11289915
ABSTRACT:
A bipolar transistor with raised extrinsic base and selectable self-alignment between the extrinsic base and the emitter is disclosed. The fabrication method may include the formation of a predefined thickness of a first extrinsic base layer of polysilicon or silicon on an intrinsic base. A dielectric landing pad is then formed by lithography on the first extrinsic base layer. Next, a second extrinsic base layer of polysilicon or silicon is formed on top of the dielectric landing pad to finalize the raised extrinsic base total thickness. An emitter opening is formed using lithography and RIE, where the second extrinsic base layer is etched stopping on the dielectric landing pad. The degree of self-alignment between the emitter and the raised extrinsic base is achieved by selecting the first extrinsic base layer thickness, the dielectric landing pad width, and the spacer width.
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Dunn James S.
Harame David L.
Joseph Alvin J.
Khater Marwan H.
Liu Qizhi
Dang Phuc T.
Hoffman Warnick & D'Alessandro LLC
Jaklitsch Lisa U.
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