Bilayered metal hardmasks for use in dual damascene etch...

Details Bilayered metal hardmasks for use in dual damascene etch... Bilayered metal hardmasks for use in dual damascene etch...

2007-07-10

2007-07-10

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S623000, C438S624000, C438S625000

Reexamination Certificate

active

11330834

ABSTRACT:
A metal hardmask for use with a Dual Damascene process used in the manufacturing of semiconductor devices. The metal hardmask has advantageous translucent characteristics to facilitate alignment between levels while fabricating a semiconductor device and avoids the formation of metal oxide residue deposits. The metal hardmask comprises a first or primary layer of TiN (titanium nitride) and a second or capping layer of TaN (tantalum nitride).

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