Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-01-04
2005-01-04
Thompson, Craig A. (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
Reexamination Certificate
active
06838396
ABSTRACT:
A bilayer dielectric structure for substantially reducing or eliminating metal contaminants formed during subsequent polysilicon deposition is provided. The bilayer dielectric structure includes an upper surface region that is rich in chlorine located atop a bottom surface region. The upper surface region that is rich in chlorine removes metal contaminates that are present atop the structure during subsequent formation of a polysilicon layer. A method of forming the bilayer structure is also provided.
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Burnham Jay S.
Elliott James R.
Gault Kenneth R.
Ishaq Mousa H.
Shank Steven M.
International Business Machines - Corporation
Sabo, Esq. William D.
Scully Scott Murphy & Presser
Thompson Craig A.
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