BiDMOS semiconductor device and method of fabricating the same

Details BiDMOS semiconductor device and method of fabricating the same BiDMOS semiconductor device and method of fabricating the same

1996-09-27

1999-03-16

Dutton, Brian

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438212, 438272, H01L 218249, H01L 218238, H01L 21336

Patent

active

058829660

ABSTRACT:
A BiDMOS device in which a bipolar transistor and a DMOS transistor are formed on the same substrate, thereby resulting in a high degree of integration, and a method of fabricating the same using a reduced number of process steps. A high voltage operating characteristic is achieved because the gate of the DMOS transistor isolates the base and collector of the bipolar transistor. In addition, the junction capacitance between the bipolar base and collector regions is considerably reduced due to the isolation provided by the DMOS gate polysilicon.

REFERENCES:
patent: 4048649 (1977-09-01), Bohn
patent: 5679972 (1997-10-01), Kim

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