Bidirectional trench gated power mosfet with submerged body bus

Details Bidirectional trench gated power mosfet with submerged body bus Bidirectional trench gated power mosfet with submerged body bus

1998-11-03

2000-08-01

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438238, 438274, 438589, H01L 21336

Patent

active

060966084

ABSTRACT:
A trench power MOSFET includes a body region which is not shorted to the source region and which is entirely covered by the source region within each cell of the MOSFET. The body region within each MOSFET cell is brought to the surface of the substrate (or epitaxial layer overlying the substrate) in an area outside of the MOSFET cell, and is connected to a body contact bus which is electrically insulated from the source bus. A deep diffusion of the same conductivity type as the body region may be formed adjacent the trench gate but outside of a MOSFET cell to protect the gate oxide from excessive field potentials at the corners of the gate. The deep diffusion is also connected to the body contact bus, which may include a metal layer, a submerged region of the second conductivity, or both.

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