Biased H 2 etch process in deposition-etch-deposition gap fill

Details Biased H 2 etch process in deposition-etch-deposition gap fill Biased H 2 etch process in deposition-etch-deposition gap fill

2007-01-16

2007-01-16

Smith, Bradley K. (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21218

Reexamination Certificate

active

10733858

ABSTRACT:
Biased plasma etch processes incorporating H2etch chemistries. In particular, high density plasma chemical vapor etch-enhanced (deposition-etch-deposition) gap fill processes incorporating etch chemistries which incorporate hydrogen as the etchant that can effectively fill high aspect ratio gaps while reducing or eliminating dielectric contamination by etchant chemical species.

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