Bi-layer photoresist dry development and reactive ion etch...

Details Bi-layer photoresist dry development and reactive ion etch... Bi-layer photoresist dry development and reactive ion etch...

2006-06-27

2006-06-27

Barreca, Nicole (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S311000, C430S313000, C216S067000, C438S710000, C438S725000

Reexamination Certificate

active

07067235

ABSTRACT:
A method for semiconductor device feature development using a bi-layer photoresist including providing a non-silicon containing photoresist layer over a substrate; providing a silicon containing photoresist layer over the non-silicon containing photoresist layer; exposing an exposure surface of the silicon containing photoresist layer to an activating light source said exposure surface defined by an overlying pattern according to a photolithographic process; developing the silicon containing photoresist layer according to a photolithographic process to reveal a portion the non-silicon containing photoresist layer; and, dry developing said non-silicon containing photoresist layer in a plasma reactor by igniting a plasma from an ambient mixture including at least nitrogen and oxygen.

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