Radiant energy – Electrically neutral molecular or atomic beam devices and...
Reexamination Certificate
2006-04-25
2006-04-25
Wells, Nikita (Department: 2881)
Radiant energy
Electrically neutral molecular or atomic beam devices and...
C315S111510, C315S111810
Reexamination Certificate
active
07034285
ABSTRACT:
A beam source has a plasma generating chamber and a gas inlet port for introducing a gas into the plasma generating chamber. The beam source includes a plasma generator for generating positive-negative ion plasma containing positive ions at a density of at least 1010ions/cm3and negative ions from the gas. The beam source also includes a plasma potential adjustment electrode disposed in the plasma generating chamber and a grid electrode having a plurality of beam extraction holes formed therein. The beam extraction holes have a diameter of at least 0.5 mm. The beam source has a first power supply for applying a voltage of at most 500 V between the plasma potential adjustment electrode and the grid electrode.
REFERENCES:
patent: 4158589 (1979-06-01), Keller et al.
patent: 4450031 (1984-05-01), Ono et al.
patent: 4486665 (1984-12-01), Leung et al.
patent: 4898557 (1990-02-01), Engemann
patent: 5216330 (1993-06-01), Ahonen
patent: 5827435 (1998-10-01), Samukawa
patent: 5858477 (1999-01-01), Veerasamy et al.
patent: 5883470 (1999-03-01), Hatakeyama et al.
patent: 5928528 (1999-07-01), Kubota et al.
patent: 6073578 (2000-06-01), Shim et al.
patent: 6076483 (2000-06-01), Shintani et al.
patent: 6150755 (2000-11-01), Druz et al.
patent: 6167835 (2001-01-01), Ootera et al.
patent: 6217703 (2001-04-01), Kitagawa
patent: 6294862 (2001-09-01), Brailove et al.
patent: 6331701 (2001-12-01), Chen et al.
patent: 6346768 (2002-02-01), Proudfoot
patent: 6392187 (2002-05-01), Johnson
patent: 6512333 (2003-01-01), Chen
patent: 6805891 (2004-10-01), Vijayen et al.
patent: 6872289 (2005-03-01), Mizuno et al.
patent: 2004/0221815 (2004-11-01), Fukuda et al.
patent: WO 01/06534 (2001-01-01), None
patent: WO 02/078407 (2002-10-01), None
J.M.E. Harper et al., “Low Energy Ion Beam Etching”, J. Electrochem. Soc: Solid-State Science and Technology, vol. 128, No. 5, May 1981, pp. 1077-1083.
Harold R. Kaufman, “Technology of ion beam sources used in sputtering”, J. Vac. Sci. Technol. 15(2), Mar./Apr. 1978, pp. 272-276.
Shoji Kitamura, “Ion Engine (Direct Current Discharge Type)”, J. Vac. Soc. Jpn. vol. 45, No. 4, 2002, pp. 329-335.
Fukuda Akira
Hiyama Hirokuni
Ichiki Katsunori
Samukawa Seiji
Shibata Akio
Ebara Corporation
Smith II Johnnie L
Tohoku University
Wells Nikita
Westerman Hattori Daniels & Adrian LLP
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