Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-02-01
2005-02-01
Lee, John R. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C118S7230MR, C156S345420, C315S111210
Reexamination Certificate
active
06849857
ABSTRACT:
A beam processing apparatus comprises a workpiece holder (20) for holding a workpiece (X), a plasma generator for generating a plasma in a vacuum chamber (3), first electrode (4) disposed in the vacuum chamber (3), and a second electrode (5) disposed upstream of the first electrode (4) in the vacuum chamber (3). The beam processing apparatus further comprises a voltage applying unit for applying a variable voltage between the first electrode (4) and the second electrode (5) to alternately extract positive ions (6) and negative ions from the plasma generated by the plasma generator.
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Hiyama Hirokuni
Ichiki Katsunori
Samukawa Seiji
Yamauchi Kazuo
Ebara Corporation
Hashmi Zia R.
Lee John R.
Westerman Hattori Daniels & Adrian LLP
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