Base cell for BiCMOS and CMOS gate arrays

Details Base cell for BiCMOS and CMOS gate arrays Base cell for BiCMOS and CMOS gate arrays

1994-05-10

1997-01-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257202, 257205, H01L 2710

Patent

active

055919952

ABSTRACT:
A gate array base cell is disclosed which provides decreased input loading. The preferred base cell comprises two rows of CMOS sites. Each row comprises small CMOS sites CS and large CMOS sites CL. The transistor gates in the small CMOS site CS are narrower than the transistor gates in the large CMOS site CL. Preferably, the CS sites comprise transistor gates one half the size of transistor gates in the CL sites so that transistor gates in the CS sites may be connected in parallel to form the electrical equivalent of transistor gates in the CL sites.

REFERENCES:
patent: 5038192 (1991-08-01), Bonneau et al.
patent: 5055716 (1991-10-01), Gamel
patent: 5068548 (1991-11-01), Gamel
patent: 5107147 (1992-04-01), Yee et al.
patent: 5217915 (1993-06-01), Hashimoto et al.
patent: 5289021 (1994-02-01), Gamel

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