Barrier metal re-distribution process for resistivity reduction

Details Barrier metal re-distribution process for resistivity reduction Barrier metal re-distribution process for resistivity reduction

2006-07-04

2006-07-04

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S643000, C438S653000

Reexamination Certificate

active

07071095

ABSTRACT:
A novel process for re-distributing a barrier layer deposited on a single damascene, dual damascene or other contact opening structure. The process includes providing a substrate having a contact opening structure and a metal barrier layer deposited in the contact opening structure, re-sputtering the barrier layer by bombarding the barrier layer with argon ions and metal ions, and re-sputtering the barrier layer by bombarding the barrier layer with argon ions.

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patent: 2002/0084181 (2002-07-01), Gopalraja et al.
patent: 2003/0034244 (2003-02-01), Yasar et al.
patent: 10223566 (1998-08-01), None

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