Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-08
2008-07-08
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S635000, C257S637000, C257S640000, C257S649000, C257SE23134, C257SE21507, C257SE21627, C257SE21641
Reexamination Certificate
active
07397073
ABSTRACT:
The present invention provides a semiconducting device including a gate dielectric atop a semiconducting substrate, the semiconducting substrate containing source and drain regions adjacent the gate dielectric; a gate conductor atop the gate dielectric; a conformal dielectric passivation stack positioned on at least the gate conductor sidewalls, the conformal dielectric passivation stack comprising a plurality of conformal dielectric layers, wherein no electrical path extends entirely through the stack; and a contact to the source and drain regions, wherein the discontinuous seam through the conformal dielectric passivation stack substantially eliminates shorting between the contact and the gate conductor. The present invention also provides a method for forming the above-described semiconducting device.
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Engel Brett H.
Lucarini Stephen M.
Sylvestri John D.
Wang Yun-Yu
Capella, Esq. Steven
Diaz José R
International Business Machines - Corporation
Jackson Jerome
Scully , Scott, Murphy & Presser, P.C.
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