Backside contacts for MOS devices

Details Backside contacts for MOS devices Backside contacts for MOS devices

2008-07-22

2008-07-22

Prenty, Mark (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S758000

Reexamination Certificate

active

07402866

ABSTRACT:
A semiconductor structure includes a semiconductor substrate having a first surface and a second surface opposite the first surface, a gate dielectric over the first surface of the semiconductor substrate, a gate electrode over the gate dielectric, a source/drain region having at least a portion in the semiconductor substrate, a dielectric layer having a first surface and a second surface opposite the first surface wherein the first surface of the dielectric layer adjoins the second surface of the semiconductor substrate, and a contact plug in the dielectric layer, wherein the contact plug extends from a bottom side of the source/drain region to the second surface of the dielectric layer.

REFERENCES:
patent: 6407427 (2002-06-01), Oh
patent: 6483147 (2002-11-01), Lin
patent: 6921961 (2005-07-01), Sanchez et al.
patent: 6958285 (2005-10-01), Siniaguine
patent: 6979651 (2005-12-01), Hellig et al.
patent: 7005380 (2006-02-01), Aminpur et al.
patent: 2003/0203546 (2003-10-01), Burbach et al.
patent: 2005/0253175 (2005-11-01), Taddiken
patent: 2007/0267698 (2007-11-01), Bernstein et al.

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